Wafer from Cambridge. Received on 15/01/2020
This is an induced wafer.
Here is a scan of the MBE growth sheet: W1557_Growth_sheet.pdf
Essentially the growth is:
| || || |
|GaAs ||- ||2nm |
|AlGaAs ||- ||33nm |
|GaAs ||- ||1um |
Here are characterisation data from the MBE growers (if available) - (insert scanned jpg here).
Here are some of our own characterisation data (insert jpg & details of measurement T, date, by whom, file location)
T = 0.25K
, Processed and measured by Yoni
smb://infpwfs605.ad.unsw.edu.au/PHY/researchgroups/gqed/Yonatan/PhD/PhD Work/Projects/Epitaxial Aluminium/Cambridge/W15 batch/Comparison/Density.jpg
Different colours are different gate voltages:
smb://infpwfs605.ad.unsw.edu.au/PHY/researchgroups/gqed/Yonatan/PhD/PhD Work/Projects/Epitaxial Aluminium/Cambridge/W15 batch/W1557/Measurements/SdH/SdHC - A3.2 RUN 2/SdHCAll.jpg
Here is a scanned copy of the wafer usage sheet from the measurement lab.
This should be updated regularly by whoever takes a piece of wafer.
Processing hints / tips
Please give details of processing that worked well for this wafer. Even a scan of a lab-book page, with details of contact resistances etc.