Wafer from Cambridge. Received on 15/01/2020
This is an induced wafer.
Growth details
Here is a scan of the MBE growth sheet:
W1557_Growth_sheet.pdf
Essentially the growth is:
| | |
GaAs | - | 2nm |
AlGaAs | - | 33nm |
GaAs | - | 1um |
Characterisation details
Here are characterisation data from the MBE growers (if available) - (insert scanned jpg here).
Here are some of our own characterisation data (insert jpg & details of measurement T, date, by whom, file location)
T = 0.25K, Processed and measured by Yoni
smb://infpwfs605.ad.unsw.edu.au/PHY/researchgroups/gqed/Yonatan/PhD/PhD Work/Projects/Epitaxial Aluminium/Cambridge/W15 batch/Comparison/Density.jpg
Different colours are different gate voltages:
smb://infpwfs605.ad.unsw.edu.au/PHY/researchgroups/gqed/Yonatan/PhD/PhD Work/Projects/Epitaxial Aluminium/Cambridge/W15 batch/W1557/Measurements/SdH/SdHC - A3.2 RUN 2/SdHCAll.jpg
Material usage
Here is a scanned copy of the wafer usage sheet from the measurement lab.
This should be updated regularly by whoever takes a piece of wafer.
Processing hints / tips
Please give details of processing that worked well for this wafer. Even a scan of a lab-book page, with details of contact resistances etc.